The effect of doping in different layers on 2DEG for ultrathin-biarrier AlN/GaN heterostructures


All Abbas J., Narin P. , Atmaca G., Kutlu E., Sarıkavak-Lısesıvdin B., Lişesivdin S. B.

Optoelectronics And Advanced Materials-Rapid Communications, cilt.11, ss.328-331, 2017 (SCI İndekslerine Giren Dergi)

  • Cilt numarası: 11 Konu: 5
  • Basım Tarihi: 2017
  • Dergi Adı: Optoelectronics And Advanced Materials-Rapid Communications
  • Sayfa Sayıları: ss.328-331

Özet

In  this  study,  we  have  numerically  investigated  the  two-dimensional  electron  gas  (2DEG)  carrier  densities  and  electron probability densities of pseudomorphically grown ultrathin-barrier AlN/GaN heterostructures using self-consistent solutions of one-dimensional, non-linear Schrödinger–Poisson equations. In these calculations, we have focused on three different AlN/GaN heterostructures included fully undoped, the only Si-doped cap layer and the only Si-doped barrier layer. As a result of the calculations, it was found that doping of AlN barrier layer more effective than other cases on the 2DEG carrier density and the doping of GaN cap layer has not a significant effect on the 2DEG probability densities.