All Abbas, J. Et Al. 2017. The effect of doping in different layers on 2DEG for ultrathin-biarrier AlN/GaN heterostructures. Optoelectronics And Advanced Materials-Rapid Communications , vol.11 , 328-331.

All Abbas, J., Narin, P., Atmaca, G., Kutlu, E., Sarıkavak-Lısesıvdin, B., & Lişesivdin, S. B. , (2017). The effect of doping in different layers on 2DEG for ultrathin-biarrier AlN/GaN heterostructures. Optoelectronics And Advanced Materials-Rapid Communications , vol.11, 328-331.

All Abbas, Jangiz Et Al. "The effect of doping in different layers on 2DEG for ultrathin-biarrier AlN/GaN heterostructures," Optoelectronics And Advanced Materials-Rapid Communications , vol.11, 328-331, 2017

All Abbas, Jangiz A. Et Al. "The effect of doping in different layers on 2DEG for ultrathin-biarrier AlN/GaN heterostructures." Optoelectronics And Advanced Materials-Rapid Communications , vol.11, pp.328-331, 2017

All Abbas, J. Et Al. (2017) . "The effect of doping in different layers on 2DEG for ultrathin-biarrier AlN/GaN heterostructures." Optoelectronics And Advanced Materials-Rapid Communications , vol.11, pp.328-331.

@article{article, author={Jangiz All Abbas Et Al. }, title={The effect of doping in different layers on 2DEG for ultrathin-biarrier AlN/GaN heterostructures}, journal={Optoelectronics And Advanced Materials-Rapid Communications}, year=2017, pages={328-331} }