Asymmetric amplitude variation for four tone small signal input GaN HEMT at different temperatures Dört ton küçük i̇şaret gi̇ri̇şli̇ GaN HEMT transi̇störün farkli sicakliklardaki̇ asi̇metri̇k genli̇k deǧi̇ş i̇mi̇


Gökrem L., Çelebi F. V. , Yildirim R.

Journal of the Faculty of Engineering and Architecture of Gazi University, vol.25, no.4, pp.779-786, 2010 (Journal Indexed in SCI Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 25 Issue: 4
  • Publication Date: 2010
  • Title of Journal : Journal of the Faculty of Engineering and Architecture of Gazi University
  • Page Numbers: pp.779-786

Abstract

In this study, temperature dependence of GaN HEMT is analyzed by Volterra power series expansion up to third order by obtaining the small signal transfer functions H1, H2 and H3. By using the first order-kernel small signal transfer function (H1) at different temperature values of 100K, 300K and 600K (Kelvin, K) of four-tone small signal input, The intermodulation (IMD) frequency components are analyzed with respect to gate to source voltage Vgs. In the study, the IMD frequency components are examined in two groups which are (1-6) and (7-17) respectively. The asymmetric amplitude changes between and inside the groups, critical frequency region, bandwidth and IMD communications are also evaluated.