Illumination and voltage effects on the forward and reverse bias current–voltage (I-V) characteristics in In/In2S3/p-Si photodiodes
Journal of Materials Science: Materials in Electronics, cilt.32, sa.17, ss.21825-21836, 2021 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 32 Sayı: 17
- Basım Tarihi: 2021
- Doi Numarası: 10.1007/s10854-021-06378-4
- Dergi Adı: Journal of Materials Science: Materials in Electronics
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
- Sayfa Sayıları: ss.21825-21836
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Hayır
Özet
The illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20–100 mW/cm2) between ± 2 V. Two linear regions in the forward-bias ln(I)-V plots were observed. The value of diode ideality factor (n) had an increasing trend with increasing illumination intensity while the barrier height (ΦBo) had a decreasing trend due to the increase of photocurrent. The photodiode properties were also investigated, and the value of linear-dynamic value range (LDR) was found to be 20.56 dB. The photoresponse (Iph/Idark), the photoresponsivity (R), and specific detectivity (D*) of the photodiode were calculated as a function of the illumination. The open-circuit voltage (Voc) and short-current (Isc) were found to be 0.36 V and 2.87 mA under 100 mW.cm−2 illumination intensity, respectively. The possible conduction mechanisms (CMs) were investigated using the forward ln(I)-V and reverse ln(I)-V0.5 plots. The energy-dependent surface states (Nss) profile was extracted from the positive I-V data by considering voltage-dependent barrier height (BH) and ideality factor (n) in dark and illumination at 100 mW/cm2.