In this study, poly(hydridocarbyne) (PHC), a pre-ceramic polymer that can be converted to ceramic upon heating, was used to fabricate Ag/PHC/p-Si metal-interlayer-semiconductor (MIS) diode. The diode obtained by easy processing steps presented a good rectifying behavior and a sufficient reverse bias saturation. By using the forward bias I-V characteristics, the ideality factor (n) and barrier height (Phi(b)) of Ag/PHC/p-Si MIS structure were found as 1.93 and 0.94 eV, respectively. The non-ideal I-V behavior with the value of ideality factor greater than unity was attributed to series resistance. The Phi (b) value of 0.94 eV obtained for Ag/PHC/p-Si MIS diode was larger than value of 0.84 of conventional Ag/p-Si Schottky diode. This was ascribed to PHC interlayer influencing the space-charge region of Si. The interface state density of MIS diode was determined, and it was found that the interface state density of Ag/p-Si junction significantly changed by PHC organic layer inserted into metal and semiconductor. Furthermore, Cheung's and Norde's functions were used to extract barrier height and series resistance values, and the obtained results were compared.