Activation mechanism in InGaN grown by MOVPE
6TH International Conference of the Balkan Physical Union, İstanbul, Türkiye, 22 Ağustos 2006 - 26 Ağustos 2007, cilt.899, ss.671, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: 899
- Doi Numarası: 10.1063/1.2733412
- Basıldığı Şehir: İstanbul
- Basıldığı Ülke: Türkiye
- Sayfa Sayıları: ss.671
- Anahtar Kelimeler: Hall effect, InGaN epilayers, Resistivity
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
Activation mechanism in unintentionally-doped InGaN epilayers grown by metal organic vapor phase epitaxy was investigated as depending on In mole fraction. The samples were evaluated by variable temperature Hall effect measurements. For all samples n-type conductivity was found to be dominated by a donor with activation energy between 2.48 meV and 14.2 meV. © 2007 American Institute of Physics.