Activation mechanism in InGaN grown by MOVPE

YILDIZ A., LİŞESİVDİN S. B., ACAR S., KASAP M.

6TH International Conference of the Balkan Physical Union, İstanbul, Turkey, 22 August 2006 - 26 August 2007, vol.899, pp.671, (Full Text) identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733412
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.671
  • Keywords: Hall effect, InGaN epilayers, Resistivity
  • Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

Activation mechanism in unintentionally-doped InGaN epilayers grown by metal organic vapor phase epitaxy was investigated as depending on In mole fraction. The samples were evaluated by variable temperature Hall effect measurements. For all samples n-type conductivity was found to be dominated by a donor with activation energy between 2.48 meV and 14.2 meV. © 2007 American Institute of Physics.