Determination of the critical carrier concentration for the metal-insulator transition in Ga-doped ZnO

Sbeta, M.; Serin, T.; Yildiz, A.

doi:10.1007/s10854-018-9543-9

Determination of the critical carrier concentration for the metal-insulator transition in Ga-doped ZnO

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, cilt.29, sa.16, ss.14111-14115, 2018 (SCI İndekslerine Giren Dergi)

Cilt numarası: 29 Konu: 16
Basım Tarihi: 2018
Doi Numarası: 10.1007/s10854-018-9543-9
Dergi Adı: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Sayfa Sayıları: ss.14111-14115

Özet

Ga-doped ZnO (GZO) thin films with different Ga contents (1, 2, 4, 3, and 5 at.%) were successfully deposited on glass substrates using a spin-coating process. The temperature dependent electrical conductivity and room-temperature Hall effect measurements were performed for the films. The variation of electrical conductivity with Ga content was well explained by considering the change in the inelastic diffusion length of electrons. The critical value of carrier concentration for the metal-insulator transition was estimated as 1.77 x 10(18) cm(-3) for GZO. The critical value of Ga content, where Ga as a donor source becomes ineffective, on the order of 5.25 at.% was obtained.