Investigation of X-ray radiation response to electrical properties of Mo/Cu(In0.7Ga0.3)Te2/p-Si/Al semiconductor diode

Ağca S., Arslan S., Çankaya G.

Journal of New Results in Science, vol.12, no.3, pp.139-148, 2023 (Peer-Reviewed Journal)

  • Publication Type: Article / Article
  • Volume: 12 Issue: 3
  • Publication Date: 2023
  • Doi Number: 10.54187/jnrs.1362313
  • Journal Name: Journal of New Results in Science
  • Journal Indexes: Other Indexes
  • Page Numbers: pp.139-148
  • Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

Diodes are exposed to radiation in many operating environments and it is important to investigate the radiation effect. In this study, the impact of X-ray radiation on the electrical properties of Mo/Cu(In0.7Ga0.3)Te2/p-Si/Al semiconductor diode was explored by I-V measurements performed before and after radiation doses between 200 and 1000 centiGray. Semiconductor diode was exposed to radiation by a linear accelerator having 6 MV X-ray. The differences in series resistance, ideality factor, and barrier height were demonstrated by both I-V measurements and the Cheung-Cheung method. Moreover, the interface states density was obtained from I-V results. The increase in radiation dose increased the ideality factor and decreased the barrier height. This result was thought to be due to the increase in the interface states density and the defects in the interface of the diode. The series resistance was increased by increasing the radiation dose due to a possible decrease in mobility and free carrier concentration. As a result of exposure to X-ray, defects occurred and due to these defects, the diode deviated from the ideal. It has been observed that the electrical properties of the diode was sensitive to X-ray radiation. The results of the study demonstrated that the Mo/Cu(In0.7Ga0.3)Te2/p-Si/Al semiconductor diode can be implemented in X-ray radiation detection systems.