The temperature dependence of the inelastic scattering time in InGaN grown by MOVPE
Fizika Nizkikh Temperatur (Kharkov), cilt.36, sa.4, ss.407-412, 2009 (Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 36 Sayı: 4
- Basım Tarihi: 2009
- Dergi Adı: Fizika Nizkikh Temperatur (Kharkov)
- Derginin Tarandığı İndeksler: Scopus
- Sayfa Sayıları: ss.407-412
- Anahtar Kelimeler: Electron-electron interaction, Impurity band, Inelastic scattering time, InGaN, MOVPE, Positive magnetoconductivity, Two-band model, Weak localization
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
Low temperature electrical measurements of the resistivity, the Hall effect and the magnetoconductivity were performed on an InGaN sample having an electron concentration far above the critical value for the metal-insulator transition. Weak localization effect and two-band model were used to analyze the magnetoconductivity data. The temperature dependence of the inelastic scattering time was extracted from the magnetoconductivity data at low temperatures. It was found that the inelastic scattering time is proportional to T-1.63, suggesting that electron-electron interactions are dominant. © A. Yildiz and M. Kasap, 2010.