In view of CdS growth is very impotent for technological importance especially solar applications; synthesis of this material remains a topic of great interest for researchers by means of an economically and technically viable method. In the present paper, Cd/CdS/n-Si/Au-Sb sandwich structure has been grown by Successive Ionic Layer Adsorption and Reaction (SILAR) technique. For investigating the structural properties, X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDAX) measurements have been performed and it has been seen that films exhibit polycrystalline behavior. The capacitance-voltage (C-V) and conductance/w-voltage (G/w-V) characteristics of Cd/CdS/n-Si/Au-Sb structure have been investigated by considering series resistance and interface states effects. These measurements have been done in the -4 V, 4 V voltage range and in the frequency range of 10 kHz-3 MHz at room temperature. It is seen that, the series resistance (R-S) and interface state density have been strongly depend on frequency. The barrier height, donor concentration, diffusion potential parameters have been determined from the linear C-2-V plot. The barrier height values are obtained between 0.495 and 0.796 eV and doping density values have been ranged from 1.455 x 10(14) to 1.999 x 10(14) cm(-3) respectively. The capacitance-frequency (C-f) and conductance/w-frequency (G/w-f) characteristics of Cd/CdS/n-Si/Au-Sb structures have been measured at the various biases 0.00-0.14 V at room temperature. The energy distribution of the interface states (N-SS) and their relaxation time (tau) have been determined from the forward bias capacitance-frequency characteristics. The N-SS and iota values have ranged from 2.01 x 10(12) cm(-2) eV(-1) and 9.68 x 10(-4) s in (Ec-0.45) eV-2.86 x 10(13) cm(-2) eV(-1) and 3.81 x 10(-4) s in (Ec-0.75) eV, respectively. (C) 2012 Elsevier Ltd. All rights reserved.