Negative Differential Resistance Observation and a New Fitting Model for Electron Drift Velocity in GaN-Based Heterostructures

Atmaca G., Narin P. , Kutlu E., Malin T. V. , Mansurov V. G. , Zhuravlev K. S. , ...More

IEEE Transactions on Electron Devices, vol.65, no.3, pp.950-956, 2018 (Journal Indexed in SCI Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 65 Issue: 3
  • Publication Date: 2018
  • Doi Number: 10.1109/ted.2018.2796501
  • Title of Journal : IEEE Transactions on Electron Devices
  • Page Numbers: pp.950-956