CeO2 buffer layers for YBCO: Growth and processing via sol-gel technique

ÇELİK E., Schwartz J.

IEEE Transactions on Applied Superconductivity, vol.9, no.2 PART 2, pp.2264-2267, 1999 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 9 Issue: 2 PART 2
  • Publication Date: 1999
  • Doi Number: 10.1109/77.784921
  • Journal Name: IEEE Transactions on Applied Superconductivity
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.2264-2267
  • Ankara Yıldırım Beyazıt University Affiliated: Yes


In this study, the processing and growth mechanisms of CeO2 buffer layers were evaluated on Ni substrates for YBCO superconductor. The sol-gel technique was utilized to produce buffer layers from six different Ce based precursor materials. The microstructure, phase composition and formation of buffer layers were characterized by means .of ESEM, SEM, EDS, XRD, pole figure XRD and DTA techniques. The results indicated that the CeO2 formation starts at temperature of 420°C. It was found that the best crack free CeO2 thin films were obtained by using Ce(NO3)3.6H2O and colloidal CeO2 based precursor materials. Different unions and their concentrations also influenced the structure of thin films. © 1999 IEEE.