Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE

YILDIZ A., ÖZTÜRK M. A., KASAP M.

6TH International Conference of the Balkan Physical Union, İstanbul, Turkey, 22 August 2006 - 26 August 2007, vol.899, pp.295-296, (Full Text) identifier

  • Publication Type: Conference Paper / Full Text
  • Volume: 899
  • Doi Number: 10.1063/1.2733153
  • City: İstanbul
  • Country: Turkey
  • Page Numbers: pp.295-296
  • Keywords: H2 and N2 flows, InGaN, MOVPE
  • Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

We present a study on the n-type ternary InGaN layers grown by atmospheric pressure vertical metal organic chemical vapor deposition on GaN template/(0001) sapphire substrate. An investigation in the different growth conditions on n-type of the InxGa1-xN alloys was made for three series samples. Structural, electrical and optical properties were characterized by High X-Ray Diffraction, Hall effect and Photoluminescence respectively. © 2007 American Institute of Physics.