Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE
6TH International Conference of the Balkan Physical Union, İstanbul, Türkiye, 22 Ağustos 2006 - 26 Ağustos 2007, cilt.899, ss.295-296, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: 899
- Doi Numarası: 10.1063/1.2733153
- Basıldığı Şehir: İstanbul
- Basıldığı Ülke: Türkiye
- Sayfa Sayıları: ss.295-296
- Anahtar Kelimeler: H2 and N2 flows, InGaN, MOVPE
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
We present a study on the n-type ternary InGaN layers grown by atmospheric pressure vertical metal organic chemical vapor deposition on GaN template/(0001) sapphire substrate. An investigation in the different growth conditions on n-type of the InxGa1-xN alloys was made for three series samples. Structural, electrical and optical properties were characterized by High X-Ray Diffraction, Hall effect and Photoluminescence respectively. © 2007 American Institute of Physics.