Influence of the spin acceleration time on the properties of ZnO:Ga thin films deposited by sol–gel method
Journal of Sol-Gel Science and Technology, cilt.86, sa.2, ss.513-520, 2018 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 86 Sayı: 2
- Basım Tarihi: 2018
- Doi Numarası: 10.1007/s10971-018-4652-8
- Dergi Adı: Journal of Sol-Gel Science and Technology
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.513-520
- Anahtar Kelimeler: Ga dopant, Resistivity, Spin acceleration time, Spin coating, Zinc oxide
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
A detailed study of the structural, morphological, optical, and electrical properties of the spin-coated Ga-doped ZnO (GZO) films in which these properties are altered by varying the spin acceleration time (tacc) was undertaken. The results showed that, by varying tacc, there is no significant variation in crystal size, and band gap energy of the films, while some physical parameters such as strain (ε) , surface roughness (RMS), and porosity (P) are remarkably varied. By increasing tacc from 0 to 8 s, ε, RMS, and P, were increased by 230, 83, and 49%, respectively. Electrical data were presented to demonstrate unambiguously that the variation in the films resistivity (ρ) is closely connected to the change in these parameters. To explain these findings, a simple formula was proposed in the investigated range of tacc, which demonstrated that ρ is more related to ε and P, and then to RMS.