Influence of the spin acceleration time on the properties of ZnO:Ga thin films deposited by sol–gel method


Sbeta M., Atilgan A., Atli A., Yildiz A.

Journal of Sol-Gel Science and Technology, vol.86, no.2, pp.513-520, 2018 (Peer-Reviewed Journal) identifier

  • Publication Type: Article / Article
  • Volume: 86 Issue: 2
  • Publication Date: 2018
  • Doi Number: 10.1007/s10971-018-4652-8
  • Journal Name: Journal of Sol-Gel Science and Technology
  • Journal Indexes: Science Citation Index Expanded, Scopus
  • Page Numbers: pp.513-520

Abstract

A detailed study of the structural, morphological, optical, and electrical properties of the spin-coated Ga-doped ZnO (GZO) films in which these properties are altered by varying the spin acceleration time (t (acc)) was undertaken. The results showed that, by varying t (acc), there is no significant variation in crystal size, and band gap energy of the films, while some physical parameters such as strain , surface roughness (RMS), and porosity (P) are remarkably varied. By increasing t (acc) from 0 to 8 s, , RMS, and P, were increased by 230, 83, and 49%, respectively. Electrical data were presented to demonstrate unambiguously that the variation in the films resistivity (rho) is closely connected to the change in these parameters. To explain these findings, a simple formula was proposed in the investigated range of t (acc), which demonstrated that rho is more related to and P, and then to RMS.