Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures

LİŞESİVDİN S. B., Balkan N., Makarovsky O., Pataǹ A., YILDIZ A., Caliskan M., ...More

Journal of Applied Physics, vol.105, no.9, 2009 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 105 Issue: 9
  • Publication Date: 2009
  • Doi Number: 10.1063/1.3120782
  • Journal Name: Journal of Applied Physics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

This work describes Shubnikov-de Haas (SdH) measurements in Al0.22 Ga0.78 N/AlN/GaN/AlN heterostructures. Our experiments coupled with the analysis of the Hall data at various temperatures confirm the formation of a two-dimensional electron gas (2DEG) at the AlN/GaN interface. A beating pattern in the SdH oscillations is also observed and attributed to a zero-field spin splitting of the 2DEG first energy subband. The values of the effective spin-orbit coupling parameter and zero-field spin-split energy are estimated and compared with those reported in the literature. We show that zero-field spin-split energy tends to increase with increasing sheet electron density and that our value (12.75 meV) is the largest one reported in the literature for GaN-based heterostructures. © 2009 American Institute of Physics.