Variable-range hopping conductivity in InGaN
6TH International Conference of the Balkan Physical Union, İstanbul, Türkiye, 22 Ağustos 2006 - 26 Ağustos 2007, cilt.899, ss.293-294, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: 899
- Doi Numarası: 10.1063/1.2733152
- Basıldığı Şehir: İstanbul
- Basıldığı Ülke: Türkiye
- Sayfa Sayıları: ss.293-294
- Anahtar Kelimeler: Hopping conduction, InGaN, Resistivity
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
Electrical resistivity of InGaN layers grown by metal organic vapor phase epitaxy has been studied at narrow temperature interval. Resistivity and Hall effect measurements were carried out as a function of temperature in the samples. We obtained that there was Mott variable range hopping mechanism in investigated samples. © 2007 American Institute of Physics.