Production, characterization and optimization of thermoelectric module and investigation of doping effects on thermoelectric performances


Baday C., YURDDAŞKAL M., Ozgul M., Zor M., ÇELİK E.

Journal of Materials Science: Materials in Electronics, vol.28, no.23, pp.17468-17481, 2017 (SCI-Expanded) identifier

Abstract

© 2017, Springer Science+Business Media, LLC.The objective of this study is to produce the thermoelectric (TE) module called as a Peltier module or element using new and promising materials that work at high temperature for generation of electricity with thermoelectric energy conversion from waste heat at high temperatures. Peltier modules used commercially nowadays can work at relatively low temperatures and their efficiency increase in proportion to the temperature difference between the surfaces of the modules. They consist of a pair of p- and n-type semiconductor. In this study, calcium cobalt oxide was chosen as a p-type semiconductor whilst zinc oxide was chosen as n-type semiconductor. Pure and aluminum-doped zinc oxide and silver-doped calcium cobalt oxide powders were synthesized via sol–gel processing successfully. The obtained powders were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), fourier transform infrared (FTIR), differential thermal analysis-thermogravimetry (DTA-TG), and scanning electron microscopy (SEM). In addition, the particle size distribution of the powders obtained via sol–gel processing was determined using a particle size analyzer. One and two leg oxide thermo-electric modules consisting of one pair of p-type 0.03 percent silver doped calcium cobalt oxide and n-type 0.02 percent aluminum doped zinc oxide bulks of 25 square millimeter cross-section and 3 millimeter heights were constructed. The thermoelectric module constructed was tested at high temperatures, and compared to other similar oxide modules reported in literature. Ultimately, the thermal stress and alteration of thermal stress depending on the leg length and side length of semiconductors were calculated using the finite element analysis (FEA) model in ANSYS 15.0 software. According to the results of the analysis, TE module was optimized in terms of mechanical behavior.