Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N

YILDIZ A., LİŞESİVDİN S. B., KASAP M., Bosi M.

Solid State Communications, vol.149, no.7-8, pp.337-340, 2009 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 149 Issue: 7-8
  • Publication Date: 2009
  • Doi Number: 10.1016/j.ssc.2008.11.026
  • Journal Name: Solid State Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.337-340
  • Keywords: E. InGaN, F. Electronic transport
  • Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metal-organic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is regarded as a highly degenerate semiconductor system with a high carrier concentration of ∼9.2×1019 cm-3. An anomalous resistivity behavior is observed over the whole temperature range. The temperature dependent resistivity of In0.17Ga0.83N exhibits a metal-semiconductor transition (MST) around 180 K. The temperature coefficient of resistivity is negative at low temperatures (T < 180 K) and it becomes positive at relatively high temperatures (T > 180 K). In addition to this, a negative magnetoresistivity (MR) has been observed below 180 K. The temperature dependent resistivity of In0.17Ga0.83N alloy is explained in the terms of the electron-electron interaction (EEI) and the weak localization (WL) phenomenon at low temperatures (T < 180 K). At high temperatures (T > 180 K) the temperature dependent resistivity obeys T2 law. © 2008 Elsevier Ltd. All rights reserved.