Anomalous temperature dependence of the electrical resistivity in In0.17Ga0.83N
Solid State Communications, cilt.149, sa.7-8, ss.337-340, 2009 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 149 Sayı: 7-8
- Basım Tarihi: 2009
- Doi Numarası: 10.1016/j.ssc.2008.11.026
- Dergi Adı: Solid State Communications
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.337-340
- Anahtar Kelimeler: E. InGaN, F. Electronic transport
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
Resistivity and Hall effect measurements on n-type undoped In0.17Ga0.83N alloy grown by metal-organic vapor phase epitaxy (MOVPE) technique were carried out as a function of temperature (15-350 K). In0.17Ga0.83N alloy is regarded as a highly degenerate semiconductor system with a high carrier concentration of ∼9.2×1019 cm-3. An anomalous resistivity behavior is observed over the whole temperature range. The temperature dependent resistivity of In0.17Ga0.83N exhibits a metal-semiconductor transition (MST) around 180 K. The temperature coefficient of resistivity is negative at low temperatures (T < 180 K) and it becomes positive at relatively high temperatures (T > 180 K). In addition to this, a negative magnetoresistivity (MR) has been observed below 180 K. The temperature dependent resistivity of In0.17Ga0.83N alloy is explained in the terms of the electron-electron interaction (EEI) and the weak localization (WL) phenomenon at low temperatures (T < 180 K). At high temperatures (T > 180 K) the temperature dependent resistivity obeys T2 law. © 2008 Elsevier Ltd. All rights reserved.