Effect of alloy composition on structural, optical and morphological properties and electrical characteristics of GaxIn 1-xP/GaAs structure
Journal of Materials Science: Materials in Electronics, cilt.24, sa.4, ss.1375-1381, 2013 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 24 Sayı: 4
- Basım Tarihi: 2013
- Doi Numarası: 10.1007/s10854-012-0937-9
- Dergi Adı: Journal of Materials Science: Materials in Electronics
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.1375-1381
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
The structural, optical and morphological properties of Ga-rich Ga xIn1-xP layers with various gallium compositions grown on epi-ready semi-insulating (100)-oriented GaAs substrates by using Molecular Beam Epitaxy technique are presented in this study. The GaxIn 1-xP/GaAs structures (S1, S2 and S3) have been evaluated by means of high resolution X-ray diffraction, photoluminescence (PL) and atomic force microscopy measurements at room temperature. Experimental forward and reverse bias current-voltage (I-V) characteristics of structure S3 was investigated at room temperature due to its better characteristics when compared to the other two samples. The main electrical parameters such as ideality factor (n), barrier height (Φ b ) and series resistance (R s ) were extracted from forward bias I-V characteristics and Cheung's function. In addition, Hall measurements were carried out as a function of temperature (30-300 K) and at a magnetic field of 0.4 T were presented for structure S3. © 2012 Springer Science+Business Media New York.