Epitaxial growth and electrical characterization of germanium
Crystal Research and Technology, cilt.46, sa.8, ss.813-817, 2011 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Özet
- Cilt numarası: 46 Sayı: 8
- Basım Tarihi: 2011
- Doi Numarası: 10.1002/crat.201000618
- Dergi Adı: Crystal Research and Technology
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.813-817
- Anahtar Kelimeler: electrical characterization, epitaxy, germanium
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
Ge homojunctions were deposited by means of Metal Organic Vapour Phase Epitaxy (MOVPE) on Ge substrates at 550 °C and 675 °C, using AsH 3 as n-type dopant. Gen/Gep, GaAs n/InGaPn/Gen/Gep and Ge n/Gep/Gep structures were prepared and studied, where n and p identify the layer or substrate doping. Vertical mesa junctions were obtained on the above structures by using conventional photolithographic and evaporation techniques. The junctions were characterized by I-V measurements under dark and illumination conditions and by EBIC technique. It has been observed that the samples grown at lower temperature showed better rectifying I-V characteristics and light conversion efficiency while EBIC results may suggest that a high As diffusion is present in the samples grown at higher temperature. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.