High-detectivity ultraviolet-B photodetector based on SnO2 thin film/Si heterojunction

Ozel K., YILDIZ A.

Semiconductor Science and Technology, vol.36, no.9, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 36 Issue: 9
  • Publication Date: 2021
  • Doi Number: 10.1088/1361-6641/ac1051
  • Journal Name: Semiconductor Science and Technology
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex
  • Keywords: UV-B radiation, SnO2 thin films, p-n heterojunction, photodetector
  • Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

© 2021 IOP Publishing Ltd Printed in the UKComposed of a metal oxide (MOx) material-based emitter layer, p–n heterojunction photodetectors (HPDs) challenge their homojunction counterparts for use in new generation applications requiring high performance. Here, n-type SnO2 thin film is deposited on p-type Si (100) substrate to form a low-cost and high-performance HPD with its decent photo-sensing ability. The device responds to ultraviolet (UV)-B light under reverse bias as short as 40 ms. High detectivity of 1.38 × 1013 Jones, pronounced responsivity of 2.16 A W−1 and large UV/visible rejection ratio of 221 are found for the device. Eventually, these satisfactory figure of merits of the device disclose its superiority for selective-detection of weak optical signals in the UV-B regime of UV radiation spectrum.