Integrating nanorods (NRs) into the structure of p-n
heterojunction-based devices proposes a promising approach to overcome
limited light absorption and charge transfer in optoelectronic devices.
Herein, a new design scheme is demonstrated to improve the UV photo
response properties of the heterojunction photodiodes. This design
contains a spin-coated SnO2 thin film underneath hydrothermally grown SnO2 NRs. The NRs
play versatile roles in enhancing the light trapping and providing
direct pathway for electron transport, while thin film provides
vertically aligned NRs formation and high-quality junction
creation. The resulting structure offers an improvement in light
harvesting and photo response characteristics of the devices. A
photoresponsivity of 110 mA/W and a photosensitivity of 5.3 are observed
in SnO2-NRs/SnO2/p-Si heterostructure.
This structure can be a promising candidate for UV sensing applications
owing to its high responsivity, sensitivity and easy fabrication