A route towards enhanced UV photo-response characteristics of SnO2/p-Si based heterostructures by hydrothermally grown nanorods

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Ozel K., Atılgan A., Köksal N. E., Yıldız A.

Journal of Alloys and Compounds, cilt.849, 2020 (SCI-Expanded, Scopus)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 849
• Basım Tarihi: 2020
• Doi Numarası: 10.1016/j.jallcom.2020.156628
• Dergi Adı: Journal of Alloys and Compounds
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Public Affairs Index, Civil Engineering Abstracts
• Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
• Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet

Özet

Integrating nanorods (NRs) into the structure of p-n heterojunction-based devices proposes a promising approach to overcome limited light absorption and charge transfer in optoelectronic devices. Herein, a new design scheme is demonstrated to improve the UV photo response properties of the heterojunction photodiodes. This design contains a spin-coated SnO₂ thin film underneath hydrothermally grown SnO₂ NRs. The NRs play versatile roles in enhancing the light trapping and providing direct pathway for electron transport, while thin film provides vertically aligned NRs formation and high-quality junction creation. The resulting structure offers an improvement in light harvesting and photo response characteristics of the devices. A photoresponsivity of 110 mA/W and a photosensitivity of 5.3 are observed in SnO_2-NRs/SnO₂/p-Si heterostructure. This structure can be a promising candidate for UV sensing applications owing to its high responsivity, sensitivity and easy fabrication process.