The change in the electrical transport mechanism from the grain boundary conduction to the nearest-neighbor hopping conduction in SnO 2

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YILDIZ A., Alsaç A., Serin T., Serin N.

Journal of Materials Science: Materials in Electronics, vol.22, no.7, pp.872-875, 2011 (SCI-Expanded, Scopus)

• Publication Type: Article / Article
• Volume: 22 Issue: 7
• Publication Date: 2011
• Doi Number: 10.1007/s10854-010-0228-2
• Journal Name: Journal of Materials Science: Materials in Electronics
• Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Page Numbers: pp.872-875
• Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

The electrical conductivity measurements on SnO 2 over a wide range of temperatures were performed. The results provided experimental evidence for a transition from the grain boundary (GB) conduction at high temperatures to the nearest-neighbor hopping (NNH) conduction at low temperatures. In the light of employed conduction models, characteristic parameters describing the electrical transport in SnO 2, such as the grain barrier height and donor concentration were determined. Atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements of SnO 2 were also presented. © Springer Science+Business Media, LLC 2010.