GZO/Si Photodiodes Exhibiting High Photocurrent-to-Dark-Current Ratio

Koksal N. E. , Sbeta M., Yildiz A.

IEEE Transactions on Electron Devices, vol.66, no.5, pp.2238-2242, 2019 (Journal Indexed in SCI Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 66 Issue: 5
  • Publication Date: 2019
  • Doi Number: 10.1109/ted.2019.2903600
  • Title of Journal : IEEE Transactions on Electron Devices
  • Page Numbers: pp.2238-2242


© 1963-2012 IEEE.ZnO:Ga (GZO)/Si photodiodes having different thicknesses of GZO layer are fabricated by the sol-gel spin-coating method. The photoelectric properties of the devices are investigated by measuring the current-voltage (I-V) characteristics. The photodiodes exhibit high rectification ratio (RR) and relatively low leakage current. Moreover, the best performance of the photodiodes is achieved by the heterojunction with GZO thickness of 35 nm, which has a transmittance over 87% in the visible range, compared to others. The resulting device shows a current RR of 1275 at ±3 V, a low saturation current I{s}} of 3× 10-8} A, and a photocurrent-to-dark-current ratio of 4639 at -3 V under 100 mW/cm2.