The influence of annealing temperature and tellurium (Te) on electrical and dielectrical properties of Al/p-CIGSeTe/Mo Schottky diodes


Fiat S., Polat I., Bacaksiz E., Kompitsas M., Cankaya G.

Current Applied Physics, cilt.13, ss.1112-1118, 2013 (SCI Expanded İndekslerine Giren Dergi) identifier

  • Cilt numarası: 13 Konu: 6
  • Basım Tarihi: 2013
  • Doi Numarası: 10.1016/j.cap.2013.03.006
  • Dergi Adı: Current Applied Physics
  • Sayfa Sayıları: ss.1112-1118

Özet

p-CuIn0.7Ga0.3(Se(1-x)Tex)(2) type thin films were synthesized by thermal evaporation method on Mo coated glass substrates. To obtain Al/CuIn0.7Ga0.3(Se(1-x)Tex)(2)/Mo Schottky diode structure for two compositions of x 0.0 and 0.6, Al metal was evaporated on upper surface of CuIn0.7Ga0.3(Se(1-x)Tex)(2) as a front contact. Al/p-CuIn0.7Ga0.3(Se(1- x)Tex)(2)/Mo structures were annealed temperature range from 150 degrees C to 300 degrees C for 10 min under vacuum. The electrical and dielectrical properties of Al/p-CuIn0.7Ga0.3(Se(1-x)Tex)(2) (CIGSeTe) Schottky barrier diodes (SBD) have been investigated. Capacitance-Voltage (C-V) characteristics, Conductance-Voltage (G/w-V) characteristics and interface state density were studied in order to obtain electrical and dielectrical parameters. The effects of interface state density (N-ss), series resistance (R-s), the dielectric constant (epsilon'), dielectric loss (epsilon ''), dielectric loss tangent (tan delta), ac electrical conductivity (sigma(ac)) and carrier doping densities were calculated from the C-V and G/w-V measurements and plotted as a function of annealing temperature. It was observed that the values of carrier doping density N-A for annealing temperature at 150 degrees C decreased from 2.83 x 10(+15) cm(-3) to 2.87 x 10(+14) cm(-3) with increasing Te content from x = 0.0 to 0.6. The series resistance for x = 0.0 found to be between 10 and 75 Omega and between 50 and 230 Omega for x = 0.6 in the range of annealing temperature at 150-300 degrees C. (C) 2013 Elsevier B.V. All rights reserved.