Mole fraction dependence of mobility in InXGa1.xN alloys
6TH International Conference of the Balkan Physical Union, İstanbul, Türkiye, 22 Ağustos 2006 - 26 Ağustos 2007, cilt.899, ss.670, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: 899
- Doi Numarası: 10.1063/1.2733411
- Basıldığı Şehir: İstanbul
- Basıldığı Ülke: Türkiye
- Sayfa Sayıları: ss.670
- Anahtar Kelimeler: Alloy scattering, Inx Ga1-xN alloys
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
Hall effect measurements was carried out at room temperature in three InxGa1-xN alloys. We have performed mobility curves as a function of In content. The effect of alloy scattering to mobility has been investigated in these samples. © 2007 American Institute of Physics.