Analysis of ternary InGaN layers grown by atmospheric pressure vertical MOVPE
6TH International Conference of the Balkan Physical Union, İstanbul, Türkiye, 22 Ağustos 2006 - 26 Ağustos 2007, cilt.899, ss.672, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: 899
- Doi Numarası: 10.1063/1.2733413
- Basıldığı Şehir: İstanbul
- Basıldığı Ülke: Türkiye
- Sayfa Sayıları: ss.672
- Anahtar Kelimeler: Hall effect, InGaN, X-ray diffraction
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
We present a study on the n-type ternary InGaN epilayers grown by atmospheric pressure vertical metal organic chemical vapor deposition on GaN template/(0001) sapphire substrate. An investigation in the different growth conditions on n-type InxGa1-xN (x=0.120 and 0.09) alloys is made for two samples. Structural and electrical properties were characterized by High X-Ray Diffraction and Hall effect respectively. © 2007 American Institute of Physics.