Characteristics of SnO2 thin films prepared by SILAR


SOLID STATE SCIENCES, vol.14, no.9, pp.1282-1288, 2012 (Journal Indexed in SCI) identifier identifier

  • Publication Type: Article / Article
  • Volume: 14 Issue: 9
  • Publication Date: 2012
  • Doi Number: 10.1016/j.solidstatesciences.2012.07.012
  • Title of Journal : SOLID STATE SCIENCES
  • Page Numbers: pp.1282-1288


SnO2 thin films were deposited on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The film thickness effect on characteristic parameters such as structural, morphological, optical and electrical properties of the films was studied. Also, the films were annealed in oxygen atmosphere (400 degrees C, 30 min) and characteristic parameters of the films were investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with tetragonal structure and were covered well on glass substrates. After the investigation of the crystalline and surface properties of the films, it was found that they were improving with increasing film thickness. Optical band gap decreased from 3.90 eV to 3.54 eV and electrical conductivity changed between 0.015-0.815 (Omega-cm)(-1) as the film thickness increased from 215 to 490 nm. The refractive index (n), optical static and high frequency dielectric constants (epsilon(o), epsilon(infinity)) values were calculated by using the optical band gap values as a function of the film thickness. (C) 2012 Elsevier Masson SAS. All rights reserved.