Photocurrent measurements in operating a-Si:H p-i-n solar cells with different P-layer conditions
6TH International Conference of the Balkan Physical Union, İstanbul, Türkiye, 22 Ağustos 2006 - 26 Ağustos 2007, cilt.899, ss.259-260, (Tam Metin Bildiri)
- Yayın Türü: Bildiri / Tam Metin Bildiri
- Cilt numarası: 899
- Doi Numarası: 10.1063/1.2733135
- Basıldığı Şehir: İstanbul
- Basıldığı Ülke: Türkiye
- Sayfa Sayıları: ss.259-260
- Anahtar Kelimeler: A-Si:H p-i-n solar cells, Fill factor, Intensity dependence, Recombination, Spectral photoresponse
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Hayır
Özet
I-V characteristics, light intensity- and modulation frequency- dependences, and spectral distributions of photocurrent of three-types of a-Si:H p-i-n devices with different p-layer conditions (baseline, thinner and thicker) have been measured at room temperature. Dc and chopped light from a HeNe laser were used for excitation. From the results, the fill-factor, quantum efficiency, carrier lifetime, and the exponent v in the power-low relationship, I ph ∼ Gv between photocurrent and generation rate were obtained and compared under different bias conditions and modulation frequencies. The results were interpreted suitably due to radiation loss and recombination mechanisms. © 2007 American Institute of Physics.