Temperature-dependent electron transport in In0.5Ga 0.5P/GaAs grown by MOVPE
Chinese Physics Letters, cilt.24, sa.8, ss.2373-2375, 2007 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 24 Sayı: 8
- Basım Tarihi: 2007
- Doi Numarası: 10.1088/0256-307x/24/8/059
- Dergi Adı: Chinese Physics Letters
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.2373-2375
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
Hall effect measurements in undoped In0.5Ga0.5P/GaAs alloy grown by metal organic vapour-phase epitaxy (MOVPE) have been carried out in the temperature range 15-350K. The experimental results are analysed using a two-band model including conduction band transport calculated using an iterative solution of the Boltzmann equation. A good agreement was obtained between theory and experiment. The impurity contents of In0.5Ga 0.5P/GaAs alloy, such as donor density ND, acceptor density NA and donor activation energy D, were also determined. © 2007 Chinese Physical Society and IOP Publishing Ltd.