Solar-blind ultraviolet photodetector based on Ti-doped Ga2O3/Si p–n heterojunction

Harmanci U., Gulluoglu M. T., Aslan F., ATILGAN A., YILDIZ A.

Journal of Materials Science: Materials in Electronics, vol.33, no.25, pp.20223-20228, 2022 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 33 Issue: 25
  • Publication Date: 2022
  • Doi Number: 10.1007/s10854-022-08840-3
  • Journal Name: Journal of Materials Science: Materials in Electronics
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, MEDLINE, Metadex, Civil Engineering Abstracts
  • Page Numbers: pp.20223-20228
  • Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

© 2022, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.A solar-blind ultraviolet photodetector based on Ti-doped Ga2O3/Si p–n heterojunction is demonstrated for the first time. It is found that the heterojunction quality forming between Ga2O3 and Si becomes better after Ti incorporation in Ga2O3. The current–voltage and temporal response measurements show that the detector based on Ti-doped Ga2O3/Si p–n heterojunction has a responsivity of 0.382 A/W and a fast rise time of 73 ms as well, which are much better than those undoped Ga2O3/Si p–n heterojunction analogues.