Driving forces of injection and regeneration in natural dye-sensitized solar cells: Insights into photovoltaic performance
Solar Energy, cilt.295, 2025 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 295
- Basım Tarihi: 2025
- Doi Numarası: 10.1016/j.solener.2025.113523
- Dergi Adı: Solar Energy
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Agricultural & Environmental Science Database, Applied Science & Technology Source, Communication Abstracts, Compendex, Environment Index, Geobase, INSPEC, Metadex, Civil Engineering Abstracts
- Anahtar Kelimeler: Hyoscyamus reticulatus, Mahonia aquifolium, Natural dye-sensitized solar cells
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
Practical fabrication, low costs, and environment-friendly energy harvesting are the most significant features of solar cells sensitized by natural dyes. However, the employment of natural dye reduces the cost of production while causing severe photovoltaic losses associated with magnitude of underlying forces behind electron injection and dye regeneration. Therefore, lack of knowledge based on these forces have limited the development of DSSCs. To overcome these obstacles for unveiling the performance DSSCs, herein, properties of DSSCs obtained from Hyoscyamus reticulatus (HR), and Mahonia aquifolium (MA) were comprehensively investigated. The magnitude of underlying forces behind electron injection (dye regeneration) was estimated to be 0.831 V (0.092 V) and 0.823 V (0.105 V) for HR and MA, respectively. These values were correlated with photovoltaic parameters. We noticed that driving force should be higher for electron injection while it should be lower for dye regeneration. Under standard AM 1.5G simulated solar radiation, HR based device shows a solar to electricity efficiency of 1.20 % (Fill factor of FF = 0.67; short-circuit current density of Jsc = 2.66 mA/cm2; open circuit voltage of Voc = 0.67 V) while MA based device shows an efficiency of 0.22 % (FF = 0.37; Jsc = 1.34 mA/cm2; Voc = 0.45 V).