Effects of inhomogeneous distribution of Si-Nc and Er ions on optical amplification in Si-Nc Er doped fiber
Optik, cilt.123, sa.13, ss.1140-1145, 2012 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 123 Sayı: 13
- Basım Tarihi: 2012
- Doi Numarası: 10.1016/j.ijleo.2011.07.041
- Dergi Adı: Optik
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.1140-1145
- Anahtar Kelimeler: Confined carrier absorption cross-section (CCa), Er-doped optical amplifier (EDFA), Silicon nanocrystal (Si-Nc), Wavelength division multiplexing (WDM)
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Hayır
Özet
In this article, the effects of Si-Nc and Er 3+ ions distribution parameters including inhomogeneous and homogeneous distribution profile are studied on the optical parameters such as gain, population inversion and Si-Nc induced losses. We have shown that by increasing of the concentration of Si-Nc particles the net gain and induced Si-Nc losses increased in homogeneous and inhomogeneous distributions. In practice, the homogeneous distribution of Er ions and Si-Nc is hard to be realized. Therefore, the inhomogeneous distributions of ions cased to perturb state in mode shape of optical signal then the investigations of those effects are important for high speed optical communications. In this article, a method for evaluation of the effects of inhomogeneous distribution of impurities on performance of optical amplifier is developed and the managing of the gain with use of suitable distribution functions is proposed. © 2011 Elsevier GmbH. All rights reserved.