In this study, electrodeposited diamond-like carbon (DLC) film was used to fabricate 12 identical Au/DLC/p-Si metal-interlayer-semiconductor (MIS) Schottky diodes. Current-voltage (I-V) measurements were carried out to obtain diodes' parameters. The rectification ratios of the MIS diodes were found between 10(3) and 10(4). By using the forward bias I-V characteristics, the average ideality factor (n) and barrier height (Phi(b)) values of Au/DLC/p-Si MIS structures were found as 2.06 and 0.84 eV, respectively. The Phi(b) value of 0.84 eV obtained for Au/DLC/p-Si MIS diode was much higher than the value of 0.34 of conventional Au/p-Si Schottky diode. Cheung-Cheung functions were also used to extract barrier height and series resistance values and the obtained results were compared with I-V method I-V measurements were also carried out under the hydrostatic pressure in the range of 0.0-2.0 kbar. It was found that barrier height and series resistance values were highly pressure sensitive and increased with the ascending pressure. It was proposed that Au/DLC/p-Si Schottky MIS diode can be used as pressure sensor due to high sensitivity to changing pressure. (C) 2015 Elsevier B.V. All rights reserved.