Electronic transport characterization of AlGaNGaN heterostructures using quantitative mobility spectrum analysis

LİŞESİVDİN S. B., YILDIZ A., ACAR S., KASAP M., ÖZÇELİK S., Ozbay E.

Applied Physics Letters, vol.91, no.10, 2007 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 91 Issue: 10
  • Publication Date: 2007
  • Doi Number: 10.1063/1.2778453
  • Journal Name: Applied Physics Letters
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

Resistivity and Hall effect measurements in nominally undoped Al0.25 Ga0.75 NGaN heterostructures grown on sapphire substrate by metal-organic chemical vapor deposition are carried out as a function of temperature (20-350 K) and magnetic field (0-1.5 T). The measurement results are analyzed using the quantitative mobility spectrum analysis techniques. It is found that there is strong two-dimensional electron gas localization below 100 K, while the thermally activated minority carriers with the activation energies of ∼58 and ∼218 meV contribute to the electron transport at high temperatures. © 2007 American Institute of Physics.