Electronic transport characterization of AlGaNGaN heterostructures using quantitative mobility spectrum analysis
Applied Physics Letters, cilt.91, sa.10, 2007 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 91 Sayı: 10
- Basım Tarihi: 2007
- Doi Numarası: 10.1063/1.2778453
- Dergi Adı: Applied Physics Letters
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet
Özet
Resistivity and Hall effect measurements in nominally undoped Al0.25 Ga0.75 NGaN heterostructures grown on sapphire substrate by metal-organic chemical vapor deposition are carried out as a function of temperature (20-350 K) and magnetic field (0-1.5 T). The measurement results are analyzed using the quantitative mobility spectrum analysis techniques. It is found that there is strong two-dimensional electron gas localization below 100 K, while the thermally activated minority carriers with the activation energies of ∼58 and ∼218 meV contribute to the electron transport at high temperatures. © 2007 American Institute of Physics.