β-Ga2O3 nanoflakes/p-Si heterojunction self-powered photodiodes

Atılgan, ABDULLAH; Yıldız, ABDULLAH; Harmanci, U.; Gulluoglu, M.T.; Salimi, KUROŞ

doi:10.1016/j.mtcomm.2020.101105

β-Ga2O3 nanoflakes/p-Si heterojunction self-powered photodiodes

Atılgan A., Yıldız A., Harmanci U., Gulluoglu M., Salimi K.

Materials Today Communications, cilt.24, 2020 (SCI-Expanded, Scopus)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 24
Basım Tarihi: 2020
Doi Numarası: 10.1016/j.mtcomm.2020.101105
Dergi Adı: Materials Today Communications
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex, INSPEC
Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
Ankara Yıldırım Beyazıt Üniversitesi Adresli: Evet

Özet

For the first time in the literature, a p-n junction photodiode based on β-Ga₂O₃ nanoflakes was fabricated on p-Si by two stage hydrothermal (nucleation and crystal growth) deposition method. The photodiode exhibited an excellent rectifying ratio of 1387 at ±10 V. The value of responsivity to ultraviolet (UV) light was 0.16 mA/W (at 0 V) and 17.1 A/W (at -10 V), respectively. The device showed a characteristic of a self-powered device. Furthermore, this study unveiled several advantages of usage of β-Ga₂O₃ nanoflakes to boost the performance of self-powered photodiodes.