β-Ga2O3 nanoflakes/p-Si heterojunction self-powered photodiodes

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Atılgan A., Yıldız A., Harmanci U., Gulluoglu M., Salimi K.

Materials Today Communications, vol.24, 2020 (SCI-Expanded) identifier

  • Publication Type: Article / Article
  • Volume: 24
  • Publication Date: 2020
  • Doi Number: 10.1016/j.mtcomm.2020.101105
  • Journal Name: Materials Today Communications
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex, INSPEC
  • Ankara Yıldırım Beyazıt University Affiliated: Yes

Abstract

For the first time in the literature, a p-n junction photodiode based on β-Ga2O3 nanoflakes was fabricated on p-Si by two stage hydrothermal (nucleation and crystal growth) deposition method. The photodiode exhibited an excellent rectifying ratio of 1387 at ±10 V. The value of responsivity to ultraviolet (UV) light was 0.16 mA/W (at 0 V) and 17.1 A/W (at -10 V), respectively. The device showed a characteristic of a self-powered device. Furthermore, this study unveiled several advantages of usage of β-Ga2O3 nanoflakes to boost the performance of self-powered photodiodes.